FF600R12KL4C-INFINEON Desc Low VCE(sat) characteristic reduces conduction

Low VCE(sat) characteristic reduces conduction losses and thermal stress at rated current

Quick Reference: BSM35GD120DN2E3224

Part Number FZ600R12KE3 Manufacturer Infineon Technologies Type IGBT Module Collector Current (IC) 600A Collector-Emitter Voltage (VCES) 1200V Availability In Stock Condition New

41A average on-state current (IT(AV)) per thyristor with a low on-state voltage drop (VT) for reduced conduction losses

FF600R12KL4C-INFINEON Desc Low VCE(sat) characteristic reduces conductionThe FF600R12KL4C is a premium Infineon IGBT module delivering exceptional performance at 600 amperes and 1200 volts. Built on Infineon's advanced IGBT4 chip technology, this module offers low conduction and switching losses, making it a preferred solution for high efficiency industrial power electronics. Its robust construction ensures reliable operation under demanding thermal and electrical conditions, meeting the needs of engineers designing high